Molecular beam epitaxy (MBE) is an experimental technique utilized for layer-by-layer growth of thin films of various quantum materials ... The final composition and stoichiometry of the film will ...

Atomic layer etching (ALE) is the reverse of atomic layer deposition (ALD). ALE can be achieved using sequential, self-limiting thermal reactions. We have recently demonstrated Al 2 O 3 ALE [1-3] and ...

While Organic Molecular Beam Deposition (OMBD) and Molecular Beam Epitaxy (MBE) are both advanced techniques for creating thin films ... Conversely, MBE also requires an ultrahigh vacuum environment ...

Ion beam-assisted molecular beam epitaxy (IB-MBE) combines ion beam technology ... The ion beam provides additional energy that increases atomic mobility on the surface, potentially resulting ...

molecular beam epitaxy, wafer inspection, and atomic layer deposition systems. The company was founded in 1989 and is headquartered in Plainview, NY.