Extreme-ultraviolet (EUV) lithography at 13.5 nm is expected ... This radiation is focused using high-quality zone plates and multilayer optics onto a back-illuminated CCD camera.

Developing EUV lithography, however ... a high-reflectivity ellipsoidal molybdenum–silicon multilayer mirror collects and focuses the light from the plasma. As well as maximizing the power ...

Special multi-layer mirrors guide the light through plates called ... primary hypothesis that the energy efficiency of existing EUV lithography sources for semiconductor production can be improved ...

The light is carried by a set of lithography mirrors that are susceptible to heat. As for the photomask itself, it is made of multilayer reflective materials designed to reflect EUV light.