A major breakthrough at Peking University might have just found the first step beyond silicon for semiconductors.

As the semiconductor industry moves to smaller scales, it must overcome several technical challenges. In 2025, we expect ...

By way of example, TSMC's N3E node as used in the latest Apple chips has gate pitch of at minimum 45 nm and a metal pitch of ...

The semiconductor industry is making its first major change in a new transistor type in more than a decade, moving toward a next-generation structure called gate-all-around (GAA) FETs. Although GAA ...

and have all the things that one expects from a GAA transistor such as enhanced control over performance and power and ...

GAA devices were first proposed in 1990 ... In finFET transistors, designers use the thickness and composition of the gate metal to adjust its work function and tune the transistor’s threshold voltage ...

To get back to the Nature paper and quote the killer line, "here we report a wafer-scale multi-layer-stacked single-crystalline 2D GAA configuration achieved with low-temperature monolithic three ...

Since starting mass production of the industry’s first 3nm process node applying Gate-All-Around (GAA) transistor architecture, Samsung has strengthened its GAA technology leadership by successfully ...