新浪网10 天
GaN HEMT为开关应用带来低噪声功率
在这种情况下，GaN HEMT 器件的 Esw 小于 1,200 V SiC MOSFET，而 1,200 V SiC MOSFET 又小于 650 V SiC MOSFET。 GaN 开关器件7 支持高频和千瓦级功率转换。这些 ...
EDN19 天
650-V GaN HEMT resides in TOLL package
Rohm Semiconductor introduced the GNP2070TD-Z, a 650-V enhancement-mode GaN HEMT in a TO-leadless (TOLL) package. With dimensions of 11.68×9.9×2.4 mm, this compact package enhances heat dissipation, ...
Semiconductor Engineering2 年
Ferroelectric HEMT Reconfigurable Transistor (U. of Michigan)
A new technical paper titled “Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT” was published by researchers at University of Michigan. “We can make our ferroelectric HEMT reconfigurable ...