EDN22 天
650-V GaN HEMT resides in TOLL package
Rohm Semiconductor introduced the GNP2070TD-Z, a 650-V enhancement-mode GaN HEMT in a TO-leadless (TOLL) package. With dimensions of 11.68×9.9×2.4 mm, this compact package enhances heat dissipation, ...
Yahoo Finance29 天
ROHM Launches 650V GaN HEMT in a Compact, High-heat Dissipation TO-Leadless Package
Santa Clara, CA and Kyoto, Japan, Feb. 27, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the GNP2070TD-Z 650V GaN HEMTs in the TO-Leadless (TOLL) package. Featuring a compact design ...
Semiconductor Engineering2 年
Ferroelectric HEMT Reconfigurable Transistor (U. of Michigan)
A new technical paper titled “Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT” was published by researchers at University of Michigan. “We can make our ferroelectric HEMT reconfigurable ...