（图片由 Infineon提供） 此基于氮化镓 ... 这使得在高开关频率下实现低导通电阻成为可能。 AlGaN/GaN HEMT 是一种常开器件。但是，这对于需要常 ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in high-power switching systems.

Hanebeck said 2.3 times more GaN chips can fit on a 300mm wafer than on a 200mm wafer, bringing down the cost of production. (Reporting by Hakan Ersen, Writing by Louis van Boxel-Woolf, Editing by ...

will lead a €10.3m European project (‘GaNext’) to develop fast-switching intelligent GaN power modules. But who is this small UK company that has been trusted to lead a consortium that includes ...

A new technical paper titled “Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT” was published by researchers at University of Michigan. “We can make our ferroelectric HEMT reconfigurable ...