Some also include current sensing. The paralleled silicon IGBT and GaN hemt efficiency argument goes like this: The GaN transistor has low conduction and low switching losses at low traction loads, ...
A new technical paper titled “Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT” was published by researchers at University of Michigan. “We can make our ferroelectric HEMT reconfigurable ...
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