One option for combating a scaling-induced hike in leakage current is to insert a high -κ dielectric between the gate metal ...
Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...
GaN and GaAs are used for a variety of transistors, including bipolar junction (BJT), enhancement-mode MOSFET and high electron mobility (HEMT). See gallium nitride and gallium arsenide.
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