新浪网9 天
GaN HEMT为开关应用带来低噪声功率
在这种情况下，GaN HEMT 器件的 Esw 小于 1,200 V SiC MOSFET，而 1,200 V SiC MOSFET 又小于 650 V SiC MOSFET。 GaN 开关器件7 支持高频和千瓦级功率转换。这些 ...
EurekAlert!2 年
GaN Si wafer Cross-Section (IMAGE)
a) Cross sectional structure. b) TEM image of top 80 nm of the HEMT structure. The dark gray layer marks the start of the surface. c) STEM image of top 80 nm. The surface starts beneath the black ...
Yahoo Finance25 天
ROHM Launches 650V GaN HEMT in a Compact, High-heat Dissipation TO-Leadless Package
followed by the release of power stage ICs that combine a gate driver and 650V GaN HEMT in a single package. This time, ROHM has developed the product incorporating 2 nd generation elements in a ...
EDN18 天
650-V GaN HEMT resides in TOLL package
Rohm Semiconductor introduced the GNP2070TD-Z, a 650-V enhancement-mode GaN HEMT in a TO-leadless (TOLL) package. With dimensions of 11.68×9.9×2.4 mm, this compact package enhances heat dissipation, ...
Semiconductor Engineering2 年
Ferroelectric HEMT Reconfigurable Transistor (U. of Michigan)
A new technical paper titled “Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT” was published by researchers at University of Michigan. “We can make our ferroelectric HEMT reconfigurable ...
来自MSN5 个月
There's two sides to this semiconductor, and many simultaneous functions
Turski worked with a team at the Polish Academy of Sciences' Institute of High Pressure Physics to grow transparent GaN substrates on a single crystal wafer roughly 400 microns thick. The HEMT and ...