GaN 器件将低损耗开关性能和高速完美结合，是能够在兆赫兹地区实现超高带宽的新兴开关电源。这些类型的电源可以提高整体效率，从而为射频基站功率放大器以及相控阵雷达的发射/接收 （T/R） 模块等应用提供快速瞬态响应。

GaN devices have a winning combination of low ... increase that needs a quick transient response for applications like RF base station power amplifiers as well as transmit/receive (T/R) modules ...

MaxLinear and RFHIC have collaborated on a power amp solution for 5G RUs that lowers power consumption, weight, and volume.

FermionIC is also eyeing Australia and the EMEA region, where it plans to expand via partnerships with other companies The demand for radio frequency (RF) chips is rising globally due to their ...

The Vietnam Gallium Nitride market is projected to witness significant growth from 2024 to 2031, driven by increasing industrial applications and technological advancements. The market is expected to ...

A question arose at Electronics Weekly after Rohm introduced an 8pad isolated for GaN transistors. In the BM6GD11BFJ-LB data sheet is a half-bridge application circuit (figure 28, right, slightly ...

GaN innovator Finwave Semiconductor has signed a global agreement with RF and microwave device distributor RFMW, bringing its ...

MACOM Technology Solutions Inc. ("MACOM"), a leading supplier of semiconductor products, will showcase its latest satellite communications products at Booth 1333, during SATELLITE 2025 from March 11 ...

Finwave’s high-power RF switches are designed to operate efficiently under high power levels, making them ideal for use in ...

As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial ...