GaN 器件将低损耗开关性能和高速完美结合，是能够在兆赫兹地区实现超高带宽的新兴开关电源。这些类型的电源可以提高整体效率，从而为射频基站功率放大器以及相控阵雷达的发射/接收 （T/R） 模块等应用提供快速瞬态响应。

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

MaxLinear and RFHIC have collaborated on a power amp solution for 5G RUs that lowers power consumption, weight, and volume.

A question arose at Electronics Weekly after Rohm introduced an 8pad isolated for GaN transistors. In the BM6GD11BFJ-LB data sheet is a half-bridge application circuit (figure 28, right, slightly ...

GaN innovator Finwave Semiconductor has signed a global agreement with RF and microwave device distributor RFMW, bringing its ...

The Vietnam Gallium Nitride market is projected to witness significant growth from 2024 to 2031, driven by increasing industrial applications and technological advancements. The market is expected to ...

Linearized Q-Band Power Amplifier (PA): Using analog linearization techniques, MACOM will demonstrate leading linear output power and efficiency improvements for Gallium Nitride (GaN) MMIC power ...

Finwave’s high-power RF switches are designed to operate efficiently under high power levels, making them ideal for use in ...

Distributor Rutronik is stocking an isolated single-channel gate driver for GaN hemts that comes in a 4.9 x 6 x 1.65mm SOP-JW8 package. Made by Rohm and called BM6GD11BFJ-LB, they have “an isolation ...

As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial ...