Gallium arsenide also has a high resistance to electrical current before it is doped with any impurities to form circuit elements. Consequently, a gallium arsenide wafer, or substrate, is ...

In 2001, Motorola developed a technique that places a spongy layer between gallium arsenide and silicon on the same wafer. Combining these two materials yields a higher-speed product at a lower cost.

The most optimal material for solid-state lasers in photonics is gallium-arsenide (GaAs), but due to ... a layer of silicon dioxide on top of the wafer. In this layer trenches are created (see ...

A breakthrough in next-generation semiconductor technology has been announced by Chinese researchers, with the creation of the world’s largest N-polar gallium nitride (GaN) wafer, at eight ...

A cancelled factory led to the sale. The solar cells produced by the equipment are “game-changing tech at liquidation values, ...

The most optimal material for solid-state lasers in photonics is gallium-arsenide (GaAs), but due to ... a layer of silicon dioxide on top of the wafer. In this layer trenches are created (see ...

Gallium arsenide is then deposited into these trenches ... V nano-ridge engineering concept to demonstrate the first full wafer-scale fabrication of electrically pumped GaAs-based lasers on ...