Texas Instruments today introduced the industry's first 80-V, 10-A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype ... In addition to ordering the available ...

Gate bias instability in GaN MISHEMTs is a complex and largely unexplored phenomenon that can occur in the different operational states —off, semi-on, and on state— each exhibiting distinct ...

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new 16W-average-power gallium nitride (GaN) power amplifier module (PAM) for 5G massive MIMO ...

TOKYO, March 18, 2025--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new 16W-average-power gallium nitride (GaN) power ...