Nexperia has expanded its GaN FET portfolio with 12 new E-mode devices, available in both low- and high-voltage options. The additions address the demand for higher efficiency and compact designs ...
The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage ...
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