imec, the research and innovation hub, has presented research that shows that despite their positive bias (on-state) ...

Their analysis reveals a strong overlap between these two ranges, confirming that GaN MISHEMTs remain stable within the typical voltage swing of RF power amplifiers. This allows linearly operating ...

Power device makers roll out their latest advances at APEC 2025, targeting a range of applications from AI data centers to ...

EPC launches the EPC2367 100-V GaN FET with an ultra-low on-resistance and higher efficiency for AI servers, robotics, and automotive power.

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in high-power switching systems. What are GaN HEMTs and why are they important?

With the transition from silicon transistors to gallium nitride (GaN) transistors ... Also: This portable power station has a standout feature that makes camping safer than ever Whether you ...

Researchers demonstrate scalable integration of graphene and GaN devices using van der Waals forces, enabling high-performance CMOS-compatible electronics.

The ID Series GaN power transistors operate from 1.8GHz to 4.2GHz, with available saturated power levels of 410W, 460W, 700W, and 800W. Additionally, RFHIC provides 2-stage hybrid drive amplifiers ...

Mazda Motor Corporation (hereinafter “Mazda”) and ROHM Co., Ltd. (hereinafter “ROHM”) have commenced a joint development of ...

Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices ... (Insulated-Gate Bipolar Transistors) in the same module ...