在这种情况下，GaN HEMT 器件的 Esw 小于 1,200 V SiC MOSFET，而 1,200 V SiC MOSFET 又小于 650 V SiC MOSFET。 GaN 开关器件7 支持高频和千瓦级功率转换。这些 ...

Rohm Semiconductor introduced the GNP2070TD-Z, a 650-V enhancement-mode GaN HEMT in a TO-leadless (TOLL) package. With dimensions of 11.68×9.9×2.4 mm, this compact package enhances heat dissipation, ...

Thus, a power switching device with a very short rise and fall time is required. GaN power HEMT technology tends to have very fast turn-on and turn-off speeds and a high pulse current capability.