搜狐1 个月
罗姆 | 650V耐压GaN HEMT新增小型、高散热TOLL封装
HEMT是High Electron Mobility Transistor（高电子迁移率晶体管）的英文首字母缩写。 *2) RDS（ON）×Qoss 评估元器件性能的指标，Qoss是指从输出端看的漏极源极 ...
Semiconductor Engineering2 年
Ferroelectric HEMT Reconfigurable Transistor (U. of Michigan)
A new technical paper titled “Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT” was published by researchers at University of Michigan. “We can make our ferroelectric HEMT reconfigurable ...
High Electron Mobility Transistor Market Present Scenario And Growth Prospects 2021 - 2031
High Electron Mobility Transistor Market Expected to Reach $9.3 Billion by 2031 - Allied Market Research David Correa Allied Market Research + 1800-792-5285 email us here Visit us on social media: ...
EDN17 天
650-V GaN HEMT resides in TOLL package
Rohm Semiconductor introduced the GNP2070TD-Z, a 650-V enhancement-mode GaN HEMT in a TO-leadless (TOLL) package. With dimensions of 11.68×9.9×2.4 mm, this compact package enhances heat dissipation, ...