Coherent said it plans to sell its epitaxial fabrication facility in Champaign, Illinois, as part of an ongoing plan to optimize its manufacturing footprint.

The cell relies on a top cell based on gallium indium phosphide (GaInP), a middle cell relying on gallium indium arsenide phosphide (GaInAsP), and a silicon bottom cell. In the paper “Wafer ...

Princeton Lightwave (PLI) applies its unique expertise in indium phosphide-based optical semiconductor devices, such as SWIR InGaAs focal plane arrays (FPA), high power lasers and avalanche ...

AXT, Inc. reported increased revenues QoQ and YoY due to higher demand for its indium phosphide wafers. The company expects lower Q1 2025 revenues due to new regulations in China over exports of ...

The device is based on indium gallium phosphide (InGaP), indium gallium arsenide (InGaAs) and germanium (Ge) and has an active area of only 0.089 mm2. “We have not included these cells into real ...

Semiconductor nanoparticles typically consist of a crystalline core made from a semiconductor material, such as cadmium selenide (CdSe), cadmium sulfide (CdS), or indium phosphide (InP). The core is ...