MoSys 1T-SRAM Macros Now Proven in Multiple Versions of TSMC'S Standard and Triple-Oxide 0.13-Micron Logic Processes SUNNYVALE, Calif. & HSINCHU, Taiwan--(BUSINESS WIRE)--Nov. 12, 2001--MoSys ...

SUNNYVALE, Calif., Jul 2é, 2010 --MoSys, Inc. (NASDAQ: MOSY), a leading provider of differentiated high-density memory and high-speed interface (I/O) intellectual property (IP), today announced the ...