Standard NAND flash storage is used in microSD cards, USB drives, and solid-state drives in computers and phones. To fit more gigabytes into smaller spaces, manufacturers ...
This room also has the following resources: The Trion ICP/RIE Etch PHTII-4301 (TRION) is a reactive ion etcher with the addition of a inductively coupled plasma to achieve a ... before metal ...
Researchers find a faster way to etch deep holes for 3D NAND Plasma-based cryo-etching technique doubles etch speed, ...
The photon detection technique has several applications. Fractal superconducting nanowire single-photon detectors (SNSPDs) ...
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Plasma technique doubles etch rate for 3D NAND flash memoryHowever, the process, known as reactive ion etching, isn't fully understood and could be improved. One recent development involves keeping the wafer––the sheet of semiconductor material to be ...
To improve data storage, researchers are perfecting 3D NAND flash memory, which stacks cells to maximize space. Researchers ...
The narrow, deep holes required for one type of flash memory are made twice as fast with the right recipe, which includes a plasma made from hydrogen fluoride.
Convenience and cost aside, there are a ton of valid reasons to spin up your own boards, ranging from not having to wait for shipping to just wanting to control the process yourself. Whichever ...
During the fabrication process, we need to etch out the unwanted oxide layer from the wafer, which can be done using plasma etching. Plasma contains high energetic ions and radicals for etching that ...
Through via hole fabrication process by deep reactive-ion etching (DRIE): (a) Sample cleaning; (b) Deposition of mask material; (c) Transfer of desired pattern; (d) Desired pattern achieved; (e) ...
The researchers compared results from this process to a more advanced cryo-etching process that uses hydrogen fluoride gas to create the plasma. "Cryo etch with the hydrogen fluoride plasma showed ...
An artist’s representation of a hole etched into alternating layers of silicon oxide and silicon nitride using plasma, to make 3D NAND flash memory. Researchers want to refine how they make ...
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