onsemi has introduced the SPM 31 intelligent power module (IPM), its first generation of 1200V silicon carbide (SiC) metal ...

V SiC MOSFET based SPM 31 IPMs. These IPMs deliver the highest energy efficiency and power density in the smallest form factor compared to utilising Field Stop 7 IGBT technology, resulting in lower ...

The fusion module contains a pair of IGBTs plus a single SiC MOSFET, and it supports up to 220 kW in the 750-V class. According to Infineon, traction inverters based on it come close to the same ...

To Address the Latest Trends in Power Electronics, Company to Showcase MaxSiC™ Series SiC MOSFETs Alongside Broad Portfolio ...

Onsemi has introduced the first generation of its 1200V SiC MOSFET based SPM 31 intelligent power modules (IPMs).

新建成的Module 3厂房已准备就绪 ... 与市场上的650V SiC和Si MOSFET相比，该系列具有更低的传导和开关损耗。在AI服务器电源装置中，采用多级PFC技术 ...

These features make them suited for three-phase inverter drive applications such as electronically commutated (EC) fans in AI data centers, heat pumps, commercial HVAC systems, servo motors, robotics, ...

The power module packaging materials market will reach almost $6.1 billion by 2030 with  a CAGR of almost 11% between 2024 ...

Vishay Intertechnology has announced that its newly released 1200V MaxSiC SiC MOSFETs will take centre stage at the Applied Power Electronics Conference and Exposition (APEC) 2025, March 16-20 in ...

For some SiC MOSFETs, which commonly feature higher ... voltage is applied to capacitance between the drain and gate of a MOSFET or between the collector and gate of an IGBT.

In addition, Vishay will provide a portfolio roadmap for 650 V to 1700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology ...