built the world's first electrically driven 'hybrid silicon laser' by harnessing the light-emitting properties of indium phosphide and the light-routing abilities and low cost of silicon.

The transmitter chip consists of four hybrid silicon lasers operating at wavelengths of 1351, 1331, 1311 and 1291 nm. These four lasers are fabricated by bonding a layer of indium phosphide to the ...

Compound Semiconductor Industry size is expected to register 10.9% CAGR between 2024 and 2032 propelled by electric vehicles ...

The two research institutes said the multijunction solar cell is based on silicon, gallium indium phosphide (GaInP) and gallium arsenide (GaAs). The device utilizes a specially designed metal ...

STANFORD researchers have developed a semimetal more conductive than copper, paving the way for an energy-efficient ...

Photon IP says that the financing will help to accelerate the industrialization and commercialization of its technology, which is said to combine silicon photonics with active devices like laser ...

Because the niobium phosphide films don’t need to be single crystals, they can be created at lower temperatures. The researchers deposited the films at 400°C, a temperature low enough to avoid ...