Intel, Samsung, TSMC and others are laying the groundwork for the transition from today’s finFET transistors to new gate-all-around field-effect transistors (GAA FETs) at the 3nm and 2nm nodes, ...
With GAA FETs, the problem is more about manufacturability than leakage, although leakage has been growing ever since the first finFETs were introduced. GAA approaches are expected to help with that ...
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The U.S. may impose more limits on China’s AI chip tech access.This technology represents a significant advancement over the existing FinFET technology primarily used in chip manufacturing. GAA technology is renowned for its enhanced efficiency and ...
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