Abstract: A charge trapping layer (CTL) technique is incorporated to achieve a normally-off Ga2O3 MOSFET. The gate dielectric was engineered using a stack composed of a blocking layer (16 nm HfOx / 2 ...

Chongqing Key Laboratory of Multi-Scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China Chongqing School, ...

School of Chemistry, University College Cork, Cork T12 YN60, Ireland ...

Using superconducting nanowire single-photon detectors (SNSPDs), researchers have achieved millimeter-scale resolution at distances up to 1 kilometer — all while using an eye-safe laser.

Combining the predominant CMOS compatibility with high electric conductivity and low thermal conductivity performance, Si nanowire and SiGe nanowire have been a candidate for μTEG. This review gives a ...

The thermal transport properties of Eshelby twisted van der Waals GeS nanowire are investigated as model systems for thermal transport. The thermal conductivity of these systems are found to ...

The new work looked in particular at adopting superconducting nanowire single-photon detectors (SNSPDs), a class of sensor whose fast detection speeds have been used to improve the sensitivity of ...