Men deported by the United States to El Salvador’s notorious Cecot prison are living in “the same” conditions as convicted gangsters, prison director Belarmino García said on Tuesday ...

This new device sets a benchmark in performance compared to previous-generation GaN and traditional silicon MOSFET solutions. The device delivers ultra-low on-resistance (RDS(on)) of 1.2mOhm, a 30% ...

Mr Gan said the task force is still working out the details of its composition and key tasks ahead, adding that the government’s main guiding principle is to be “as transparent as possible”.

Cambridge GaN Devices’s hybrid architecture ... affordable solution for drivetrains and accessories. CGD's Combo ICeGaN pairs smart the company’s ICeGaN HEMT ICs and IGBTs.

Infineon is also planning the release of MV BDS switches rated from 40 V – 120 V for static, battery disconnect applications that feature the Schottky gate GaN HEMT technology, in a two-drain, single ...

School of Science, Xi’an Polytechnic University, Xi’an 710048, PR China Xi’an Key Laboratory of Nuclear Protection Textile Equipment Technology & Engineering Research Center of Flexible Radiation ...

据央视军事4月6日发布消息，中国海警局新闻发言人刘德军表示，日本“鹤丸”号渔船于4月5日到6日非法进入到中国钓鱼岛领海，中国海警对其进行 ...

Abstract: A series of switchable resonators are proposed by incorporating the parasitic effects of two gallium nitride (GaN) high electron mobility transistor (HEMT) devices in this letter, based on ...

在科技不断演进的今天，微电子领域的创新总是令人期待。2025年4月2日，金融界最新消息独家报道，浙江集迈科微电子有限公司近期向国家知识产权局申请了一项法律保护，这项名为“增强型AlGaN/GaN HEMT器件及其制备方法”的专利，公开号为CN119743971A，申请日期 ...