In contrast, GaN power devices have been commercialized as the lateral High Electron Mobility Transistor (HEMT). These are typically manufactured on Si substrates due to a lack of viable, low-cost, ...

With the transition from silicon transistors to gallium nitride (GaN) transistors, chargers have become smaller, more efficient, safer, and run cooler. This advancement in technology has ...

Abstract: The single-event effects (SEEs) of AlGaN/GaN HEMT devices under OFF-state, semi-ON-state, and ON-state are systematically investigated from experiments and TCAD simulations. Experimental ...

One of the more spirited seminars at APEC, due to its topic of GaN versus SiC, was an insightful discussion with many compelling arguments. Wide-bandgap semiconductors—specifically gallium nitride and ...

A breakthrough in next-generation semiconductor technology has been announced by Chinese researchers, with the creation of the world’s largest N-polar gallium nitride (GaN) wafer, at eight ...