Abstract: Recently, the use of insulating substrates has emerged as a viable option for the fabrication of GaN power transistors exceeding 1 kV ... between the insulating SiC substrate and the ...

From cables to power supplies, it pays to know the intricacies of the USB-C spec if you want the fastest charging.

It is a normally off device with a cascode configuration that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies, offering superior reliability ...

Anker, a global leader in power and charging solutions, today announced the launch of its next-generation Thunderbolt™ 5 ...

to create a European-based GaN Power device platform solution. With an initial two-year scope of work, IQE and X-FAB will collaborate to develop a 650V GaN device. The agreement will build on IQE's ...

Joint Development Agreement (JDA) on GaN technology to build the future in power electronics ... Integrated Device Manufacturers, and with this agreement we will leverage this model to the benefit ...

The innovation on power device technology is key for continuous efficiency improvement. After the IGBTs in the 1980s and the superjunction in 1990s, we are now witnessing a leap ahead in the 2020s ...

Abstract: A simple and physically insightful model for predicting the switching transients of SiC MOSFETs and GaN HEMTs in power electronic half-bridges is proposed in this research. The proposed ...

IQE plc and X-FAB Silicon Foundries SE have announced a Joint Development Agreement (JDA) to create a European-based GaN Power device platform solution. With an initial two-year scope of work, the ...

Summer is just around the corner and it’s time to start thinking about all that time you’re going to spend away from the ...