Abstract: This study investigates the electrical DC and Low-frequency noise (LFN) characteristics of GaN-on-Si power MIS-HEMTs across an extensive temperature spectrum from 4 K to 420 K to assess ...

DAMASCUS, Jan 16 (Reuters) - Syria's de facto leader Ahmed al-Sharaa said on Thursday his country is ready to welcome UN forces into the UN established buffer zone with Israel. "Israel's advance ...

Device fabrication began by loading AlN substrates with a dislocation density of around 10 3 cm-2 in an MOCVD reactor and depositing, at 1250 °C, a 1 mm-thick AlN buffer, followed by a 200 nm-thick ...

Lateral GaN power devices are being mass-manufactured by several companies on both 6- and 8-inch Si(111) substrates. The typical maximum rated voltage of commercially ... etched region that includes ...

Lee Si-an, a former Produce 48 and Idol School contestant, has created a buzz online with her appearance on Netflix's popular South Korean dating show, Single's Inferno 4. On January 14 ...

The photo was for the cover of the little-seen and now-defunct SI On Campus, a reminder that Heinz was happy to pursue any subject—from a Super Bowl down to a random motocross race—for any ...

Engineers are moving from silicon-based solutions to wide-band gap ones Credit: IQE Electronics designers are now moving away from conventional Si-based power electronics and towards wide-bandgap ...

While alternative objectives have been introduced, issues with fragile losses persist, hindering progress. Popular GAN models like StyleGAN incorporate tricks such as gradient-penalized losses and ...

2025 年了，GAN 能否击败扩散模型？答案是 Yes！ 本周五，AI 社区开始讨论一种全新极简主义 GAN（生成对抗网络）。 现代版 GAN 基准论文成为了周五 ...