When light interacts with metallic nanostructures, it instantaneously generates plasmonic hot carriers, which serve as key ...

Navitas Semiconductor has announced the latest breakthrough of the world’s first production-released 650 V bi-directional ...

TI unveils the first 48-V integrated hot-swap eFuse and a new family of integrated GaN power stages in TOLL packaging.

Texas Instruments (TI) (Nasdaq: TXN) today debuted new power-management chips to support the rapidly growing power needs of ...

A 650-V bi-directional GaN IC combined with a high-speed isolated gate driver facilitates this single-stage power conversion.

Navitas Semiconductor has announced what it believes are the world’s first production-released 650 V bi-directional GaNFast ...

AI Power Roadmap of 3.2 kW, 4.5 kW, and 8.5 kW PSUs enable new levels of energy efficiency, reduced electricity costs, and ...

US embassy in Singapore characterised US-Singapore economic relations as enduring and dynamic. Read more at straitstimes.com.

Market Overview The Vietnam GaN Power Devices Market was valued at USD 7.56 million in 2023 and is projected to reach USD 34.99 million by 2029, growing at a robust CAGR of 28.90% during the forecast ...

Wise-integration, a French pioneer in digital control of GaN and GaN ICs for power conversion, will unveil its latest WiseGan ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...