Abstract: Artificial neural network-based gallium nitride high-electron-mobility transistor (ANN-based GaN HEMT) models have garnered significant attention due to their high accuracy, low development ...

In contrast, GaN power devices have been commercialized as the lateral High Electron Mobility Transistor (HEMT). These are typically manufactured on Si substrates due to a lack of viable, low-cost, ...

当科技遇上激情，往往能碰撞出令人意想不到的火花。近日，西安众力为半导体科技有限公司在国家知识产权局提交了一项关于GaN HEMT器件宽温条件下动态工作寿命试验装置及方法的专利申请。这项技术听起来可能有些冰冷生硬，但其背后蕴含的是对极限条件下 ...

The cascode configuration (Figure 3) consists of a stacked-die cascode packaged device, integrating a naturally “off” low-voltage, low-R DS(on) silicon MOSFET in series with a naturally “on” GaN HEMT.

The P/B ratio shows how a stock's market price compares to its book value. It helps gauge whether a stock is undervalued or overvalued relative to its net assets.

你知道吗？这项发明可能彻底改变我们对电子设备可靠性的理解。 在实际应用中，比如电动汽车和5G通信基站等高科技领域，GaN（氮化镓）HEMT（高电子迁移率晶体管）器件因其卓越的性能而备受青睐。但这些器件在极端温度下的表现一直是个挑战。西安众力的新 ...

Integra Essentia, operating in the Textiles - Readymade Apparels sector and classified as a Smallcap on the BSE, currently has its share price at ₹2.31. The stock has experienced fluctuations ...