This work investigates reactive DC magnetron sputtering of NbN on GaN, β-Ga2O3, and Al2O3 substrates with a focus on GaN ... X-ray photoelectron spectroscopy (XPS) revealed a gradual increase in the ...

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Department of Materials Science and Engineering, Guangdong Provincial Key Laboratory of Materials and Technologies for Energy Conversion, Guangdong Technion-Israel Institute of Technology, Shantou, ...

目前常见的宽能隙材料，包含碳化矽(SiC)、氮化??(GaN)、以及正逐渐冒出头角的氧化?? (Ga2O3)。 SiC具有高击穿电压、高热导率和高电子饱和速度，广泛应用於功率电子元件；GaN则具有高电子迁移率和高击穿电压，适用於高频和高功率应用；Ga2O3具有超宽禁带宽度和高 ...

The latest Intel chips see the Dell XPS 13 (9350) ultraportable bow out with ample performance, but familiar ergonomic issues remain. Are we really looking at the last ever XPS? Dell’s long-running ...

Department of Applied Chemistry, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjyuku-ku, Tokyo 162-8601, Japan Department of Applied Chemistry, Faculty of Science, Tokyo ...

Graphene (Gr) has high transmittance to ultraviolet (UV) light and high mobility, which can effectively collect and transfer carriers. In this work, MgZnO (MZO) films were grown on the surface of the ...