CGD今日推出的 Combo ICeGaN® 解决方案使 CGD 利用其 ICeGaN® 氮化镓（GaN）技术满足100kW 以上的电动汽车动力系统应用，该市场超过100亿美元。Combo ICeGaN®将智能 ICeGaN HEMT IC 和绝缘栅双极晶体管（IGBT）组合在同一个模块或集成功率管理器件（IPM）中，最大限度地提高 ...

CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), the fabless ... at the University. CGD’s ICeGaN HEMT technology is protected by a strong and constantly growing IP portfolio ...

Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company, has revealed more details about a solution that will enable the company to address EV powertrain applications over 100kW.

Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor ... Combo ICeGaN® combines smart ICeGaN HEMT ICs and IGBTs (Insulated-Gate Bipolar Transistors) in the same module or IPM ...

"Today, inverters for EV powertrains either use IGBTs which are low cost but inefficient at light load conditions, or SiC devices which are very efficient but also expensive. Our new Combo ICeGaN ...

Last week, it was announced that Cambridge GaN Devices (CGD) will lead a €10.3m European project (‘GaNext’) to develop fast-switching intelligent GaN power modules. But who is this small UK company ...

ICeGaN technology allows EV engineers to enjoy GaN's benefits in DC-to-DC converters, on-board chargers and potentially traction inverters. Combo ICeGaN further extends the benefits of CGD's GaN ...