“I must correct that,” said DPM Gan, who is also Trade and Industry Minister. Singapore has developed “quite an elaborate” code of conduct for how it should develop and deploy AI in an ...

Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China ...

的紧凑型车载充电器 (OBC)，该充电器采用了基于GaN单晶衬底的1200V 横向GaN HEMT器件。 近年来，为了缩短充电时间，电动汽车电池的电压不断提高。为了应对这些趋势，业界正在开发的OBC旨在实现800V和22kW的高电压和高输出功率。 但是，功率转换损耗会随着输出的 ...

Abstract: This study investigates the electrical DC and Low-frequency noise (LFN) characteristics of GaN-on-Si power MIS-HEMTs across an extensive temperature spectrum from 4 K to 420 K to assess ...

The integration of vertical and lateral gallium nitride devices can be a transformative step forward in power electronics. The lateral GaN HEMT has found wide use in many applications, including power ...

【新智元导读】GAN已死？不，它卷土重来了！布朗大学和康奈尔大学的研究者刚刚提出了R3GAN，充分利用现代架构设计，彻底摒弃临时技巧，一半参数就能碾压扩散模型。网友惊呼：游戏规则要改变了！ GAN已死？ 不，GAN又回来了！ 此前曾掀起AI圈巨大风暴的 ...

MOSFET米勒效应有这么多的影响，一个关键的因素就是由于栅极-漏极之间的电容Cgd的存在导致的，但是打开MOSFET的规格书，我们发现规格书中只给出了输入电容（Ciss），输出电容（Coss），反向传输电容（Crss），并没有我们想要的栅-源Cgs寄生电容，栅-漏Cgd寄生 ...

Engineers are moving from silicon-based solutions to wide-band gap ones Credit: IQE Electronics designers are now moving away from conventional Si-based power electronics and towards wide-bandgap ...

While alternative objectives have been introduced, issues with fragile losses persist, hindering progress. Popular GAN models like StyleGAN incorporate tricks such as gradient-penalized losses and ...