A breakthrough in next-generation semiconductor technology has been announced by Chinese researchers, with the creation of the world’s largest N-polar gallium nitride (GaN) wafer, at eight ...

One of the more spirited seminars at APEC, due to its topic of GaN versus SiC, was an insightful discussion with many compelling arguments. Wide-bandgap semiconductors—specifically gallium nitride and ...

With the transition from silicon transistors to gallium nitride (GaN) transistors, chargers have become smaller, more efficient, safer, and run cooler. This advancement in technology has ...

Abstract: The single-event effects (SEEs) of AlGaN/GaN HEMT devices under OFF-state, semi-ON-state, and ON-state are systematically investigated from experiments and TCAD simulations. Experimental ...

Some also include current sensing. The paralleled silicon IGBT and GaN hemt efficiency argument goes like this: The GaN transistor has low conduction and low switching losses at low traction loads, ...

The AR37T01 is a digitally coded stereo PCM-to-PDM conversion IP with 8-bit pattern-code programming. The IP translates parallel PCM input data into single-bit digital switching pulse-density ...