Government initiatives promoting green technologies also create a supportive regulatory environment, collectively fostering robust growth in the GaN power device market. By device type ...

Belkin today announced the launch of a range of new products, including updated power banks, over-ear headphones, and a GaN ...

Abstract: Compared with GaAs Schottky barrier diodes (SBDs), GaN SBDs offer a remarkable increase in the power capacity ... the procedure for extracting the anode temperature. This model is also ...

A key innovation in the GIT device (Figure 2) is the use of a p-GaN gate within a hybrid-drain HEMT structure, resulting in a robust, normally-off power switch. This design is supported by custom gate ...

Thus, a power switching device with a very short rise and fall time is required. GaN power HEMT technology tends to have very fast turn-on and turn-off speeds and a high pulse current capability.

CAMBRIDGE, England, February 18, 2025--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), a leading innovator in gallium nitride (GaN) power devices, has successfully closed a $32 million Series C ...

Ugreen's GaN-based power station packs a lot of juice inside a compact body with multiple USB ports and an Apple-certified adjustable MagSafe puck. In a world filled with niche chargers ...

For a given junction temperature, the device’s maximum power rating scales inversely with junction-to-case ... The peak temperature rise versus the GaN HEMT gate pitch comparison of a standard ...