Accelerating development towards the mass production of GaN devices for automotive applications ROHM's New GNP2070TD-Z 650V GaN HEMTs in the TO-Leadless Package Compact design features excellent heat ...
Rohm has formerly announced the TOLL-packaged 650V GaN hemts that Electronics Weekly featured in a GaN driving trechnology article last week. To get the devices, called GNP2070TD-Z, into the ...
ROHM's EcoGaN Series of 650V GaN HEMTs in the TOLL Package Adopted for Murata's AI Server Power Supplies TOLL package 650V ...
Figures 11 and 12 from the 650V GaN hemt GNP2070TD-Z datasheet The amplitude of the negative drain-source voltage of the low-side hemt is large – very likely a significant proportion of the ~6V ...
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ROHM and TSMC collaborate on GaN power devices for EV marketThe partnership builds on a history of collaboration between ROHM and TSMC, which includes the 2023 adoption of TSMC’s 650V GaN high-electron mobility transistors (HEMT) for ROHM’s EcoGaN series.
Santa Clara, CA and Kyoto, Japan, Feb. 27, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the GNP2070TD-Z 650V GaN HEMTs in the TO-Leadless (TOLL) package. Featuring a compact design ...
ROHM has developed 650V GaN HEMTs in the TOLL (TO-LeadLess) package: the GNP2070TD-Z. Featuring a compact design with ...
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