The acquisition of Qorvo’s SiC JFET portfolio provides onsemi with a great opportunity to accelerate the adoption of this class of transistor in circuit breakers, EV battery-disconnect units and AI ...
来自美国和日本的研究团队报告了一种击穿电压超过10kV增强型（E-mode）氧化镓（Ga₂O₃）横向结型场效应晶体管（JFETs），该器件采用了氧化镍（NiO）降低表面电场（RESURF）结构和混合漏极（hybrid-drain）的设计 ... 漏极设计的Ga₂O₃ JFET示意图：三维结构图 ...
These MOSFETs, implemented with a gate structure inserted into a trench region thoroughly etched, enable on-resistance improvement, thanks to the reduction of the channel resistance and JFET ...
Researchers built a lateral Ga2O3 junction-gate field-effect-transistor (JFET), employing high p-doped NiO for E-mode operation, and hybrid-drain structures for electric field management. Japan is a ...
Top young Chinese scientists are returning home from Cambridge, Massachusetts – a city that houses some of America’s most renowned universities – at a higher rate than anywhere else in the ...
SemiQ is targeting a range of markets including EV‑charging stations, solar inverters, industrial power supplies and induction heating. In addition to having a drain-to-source voltage (VDS) of 1200 V, ...
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