Infineon’s GaN transistors are highly efficient for power conversion in the voltage range of up to 700 V. Our GaN devices have fast turn-on/-off speed, minimum switching losses, and a large variety of package options, enabling simple and fast time-to-market.

Our family of gallium nitride (GaN) FETs with integrated gate drivers and GaN power devices offers the most efficient GaN solution with lifetime reliability and cost advantages. GaN transistors switch much faster than silicon MOSFETs, offering the …

GaN FETs have lower values compared to other transistors when it comes to the maximum allowable gate-to-source voltage (Vgs) and the threshold voltage. Similar to a MOSFET, GaN FETs also have parasitic capacitances between each terminal and parasitic inductances at each terminal. The input capacitance Ciss is the sum of Cgs and Cgd.

EPC was the first to introduce enhancement mode Gallium Nitride (eGaN) on Silicon transistors for applications such as, wireless power, autonomous vehicles, high-speed mobile communications, low cost satellites, medical devices and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

2023年1月26日 · The GaN FETs run about 20% higher in efficiency compared with the MOSFETs, and the power loss is lower by a factor of about three. At 2000 watts, the loss in the MOSFETs is about 62 watts; in the GaN FETs it is only 19 Watts.

Targeted at high-voltage / high-power applications, Nexperia cascode GaN FETs provide exceptionally high switching frequency capability for 650 V applications and the robust low on-resistance particularly suited for automotive electrification.

GaN MOSFETs are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for GaN MOSFETs.

EPC provides enhancement-mode gallium nitride (eGaN ®) FET and IC technology for power management that are higher performance and lower cost compared with silicon.

GaN Systems has a solution to easily use the MOSFET controller 12 V output voltage to drive the GaN 7 V gate input without the need of an external or integrated additional driver. This paper describes an innovative circuit that permits the safe and reliable use of standard controller MOSFET drivers with GaN devices.

• How can integrated smart features and protection in GaN simplify design and enhance robustness? • What are GaN FET package variants and cooling strategies?