Infineon’s GaN transistors are highly efficient for power conversion in the voltage range of up to 700 V. Our GaN devices have fast turn-on/-off speed, minimum switching losses, and a large …

Our family of gallium nitride (GaN) FETs with integrated gate drivers and GaN power devices offers the most efficient GaN solution with lifetime reliability and cost advantages. GaN …

GaN FETs have lower values compared to other transistors when it comes to the maximum allowable gate-to-source voltage (Vgs) and the threshold voltage. Similar to a MOSFET, GaN …

Targeted at high-voltage / high-power applications, Nexperia cascode GaN FETs provide exceptionally high switching frequency capability for 650 V applications and the robust low on …

2023年1月26日 · The GaN FETs run about 20% higher in efficiency compared with the MOSFETs, and the power loss is lower by a factor of about three. At 2000 watts, the loss in …

HEMT is very different from MOSFET. For Id-Vd breakdown curv. s are rarely seen in the datasheet. Unlike silicon MOSFET, GaN. doesn’t have avalanche breakdown. Once GaN …

Gallium Nitride FETs are now providing designers and customers with a practical and viable alternative to Silicon MOSFETs in higher density applications. GaN devices operate faster with …

GaN Systems has a solution to easily use the MOSFET controller 12 V output voltage to drive the GaN 7 V gate input without the need of an external or integrated additional driver. This paper …

GaN MOSFETs are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for GaN MOSFETs.

2023年10月16日 · Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation …