Part #: IRFP450. Download. File Size: 90Kbytes. Page: 8 Pages. Description: N - CHANNEL 500V - 0.33ohm - 14A - TO-247 PowerMESH] MOSFET. Manufacturer: STMicroelectronics.

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.

IRFP450. Power MOSFET. Markings: Part Marking Information. Devices: TO-247AC, TO-247AD, TO-274AA (High Voltage) Package Drawings: Package Information. TO-247AC (High Voltage) Reliability Data: Silicon Technology Reliability. N-Channel Accelerated Operating Life Test Result. Reliability Data:

www.irf.com 5 Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms ≤ 1 ≤ 0.1 % +-Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Maximum Effective Transient Thermal Impedance, Junction-to-Case. Fig 12a.

View IRFP450 by Vishay Siliconix datasheet for technical specifications, dimensions and more at DigiKey.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Power MOSFET IRFP450, SiHFP450. Vishay Siliconix. FEATURES. • Dynamic dV/dt Rating † Repetitive Avalanche Rated † Isolated Central Mounting Hole † Fast Switching † Ease of Paralleling † Simple Drive Requirements † Lead (Pb)-free Available. DESCRIPTION.

N-CHANNEL 500V - 0.33 OMH - 14A - TO-247 MESH OVERLAY MOSFET. IRFP450. N - CHANNEL 500V - 0.33Ω- 14A - TO-247 PowerMESH MOSFET. TYPICAL RDS(on)=0.33 Ω. EXTREMELY HIGH dv/dt CAPABILITY. 100% AVALANCHE TESTED. VERYLOW INTRINSICCAPACITANCES.